5SHY4045L0006 ABB IGCT系列模块

IGCT集成极换流晶闸管(Intergrated Gate Commutated Thyristors)是一种中压变频器开发的用于巨型电力电子成套装置中的电半导体开关器件(集成极换流晶闸管=i ]极换流晶闸管+门极单元)。

1997年由ABB公司提出。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞K跃。

IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点,在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、
低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。

IGCT Intergrated Gate Commutated Thyristors (IGCT Intergrated Gate Commutated Thyristors) is an electrical semiconductor switching device developed by a medium voltage frequency converter for use in large power electronics packages (integrated pole commutated thyristors =i).

It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap forward to power electronic equipment.

IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has high current, high blocking voltage, high switching frequency, high reliability, compact structure,
Low conduction loss and other characteristics, and resulting in low cost, high yield, has a good application prospect.

 

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