5SHY4045L0001-3BHB018162R0001 ABB 集成栅极换流晶闸IGCT

5SHY4045L005SHY4045L0001-3BHB018162R0001是一款集成栅极换流晶闸管，是一种用于工业设备中切换电流的功率半导体电子器件，它结合了IGBT和GTO的优点。IGCT的基本结构包括多个栅极并联，这样可以使关断电流大于阳极电流，从而加快关断速度。此外，IGCT的驱动功率仍然很大，但其容量与GTO相当，开关速度比GTO快10倍，并且可以省去GTO应用中庞大而复杂的缓冲电路。

5SHY4045L005SHY4045L0001-3BHB018162R0001可以制作成有或没有反向阻断能力的器件。具有反向阻断能力的IGCT称为对称型IGCT（Symmetrical IGCT，S-IGCT），其结构与电场分布和GTO晶闸管类似，通常用于电流源逆变器。不能阻挡反向电压的IGCT称为非对称型IGCT（Asymmetrical IGCT，A-IGCT），通常具有几十伏的反向击穿电压，并用于并联施加反向导通二极管（例如，在电压源逆变器中）或者没有反向电压的场合（例如，在开关电源或DC牵引斩波器中）。

总的来说，I5SHY4045L005SHY4045L0001-3BHB018162R0001是一种性能优良、应用广泛的功率半导体器件，正成为直流电网的“芯”选择，特别适用于需要大功率、高速度、高可靠性的工业应用场合。

The IC698CPE040 is a 5SHY4045L005SHY4045L0001-3BHB018162R0001 is an integrated gate converter thyristor, a power semiconductor electronic device for switching current in industrial equipment, which combines the benefits of IGBT and GTO. The basic structure of IGCT consists of multiple grids in parallel, which can make the turn-off current greater than the anode current, thereby speeding up the turn-off speed. In addition, the drive power of the IGCT is still large, but its capacity is comparable to that of the GTO, the switching speed is 10 times faster than that of the GTO, and the large and complex buffer circuit in GTO applications can be eliminated.

5SHY4045L005SHY4045L0001-3BHB018162R0001 can be made into devices with or without reverse blocking capability. An IGCT with reverse blocking capability is called a Symmetrical IGCT (S-IGCT), which is similar in structure to electric field distribution and GTO thyristors and is commonly used in current source inverters. An IGCT that cannot block the reverse voltage is called an Asymmetrical IGCT (A-IGCT), typically has A reverse breakdown voltage of tens of volts, and is used in parallel application of a reverse pilot diode (e.g., in a voltage source inverter) or where there is no reverse voltage (e.g., in a voltage source inverter). In switching power supplies or DC traction choppers).

I5SHY4045L005SHY4045L0001-3 bhb018162r0001, on the whole, is a kind of excellent performance, widely used power semiconductor devices, dc power grid is becoming a "core" choice, especially suitable for the need of high power, high speed, high reliability industrial applications.