ABB 5SHY35L4520    晶闸管模块 其日渐成为现代电力电子技术的主流器件

20世纪80年代，以IGBT为代表的高速、全控型器件迅速发展。IGBT结合了金属氧化物半导体场效应晶体管（MOSFET）驱动功率小、开关速度快以及双极型晶体管（BJT）通态压降低、载流能力大的优点。随着IGBT不断更新换代，其日渐成为现代电力电子技术的主流器件，特别是压接式IGBT的出现，使其向大功率、高效率跨出一大步，已被广泛应用于柔性直流输电（VSC-HVDC）工程当中。与此同时，通过对GTO 技术的改进，新一代可关断晶闸管类器件IGCT于20世纪90年代问世。IGCT改进了GTO芯片，并利用新型低感封装将驱动电路和芯片紧密集成到一体，显示出比传统GTO 更加显著的优点：损耗低、开关速度快、容量密度大、可靠性高等。这些优点保证了IGCT 可以在维持较低成本的基础上，安全、可靠、经济、高效地用于高压大容量功率变换领域，并在一些电力电子装置中具有更为突出的优势。

In the 1980s, high-speed, fully controlled devices represented by IGBT developed rapidly. IGBT combines the advantages of metal oxide semiconductor field effect transistor (MOSFET) with low drive power, fast switching speed, and bipolar transistor (BJT) with low on-state voltage and high current carrying capacity. With the continuous upgrading of IGBT, it has become the mainstream device of modern power electronics technology, especially the emergence of crimped IGBT, so that it has taken a big step to high power and high efficiency, and has been widely used in flexible direct current transmission (VSC-HVDC) engineering. At the same time, through the improvement of GTO technology, a new generation of turn-off thyristor device IGCT was introduced in the 1990s. IGCT improves the GTO chip and tightly integrates the driver circuit and chip in a new low-sensing package, showing more significant advantages than traditional GTO: low loss, fast switching speed, high capacity density, and high reliability. These advantages ensure that IGCT can be used safely, reliably, economically and efficiently in the field of high-voltage large-capacity power conversion on the basis of maintaining a low cost, and has more prominent advantages in some power electronic devices.

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