ABB  5SHY3545L0009  功率半导体器

IGCT是将GTO芯片与反并联二极管和]极驱动电路集成在-起，再与其门极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点,在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低,成品率高，有很好的应用前景。己用于电力系统电网装置(100MVA) 和的中功率I业驱动装置(5MW)IGCT在中压变频器领域内成功的应用了11年的时间(到09年为止), 由于IGCT的高速开关能力无需缓冲电路,因而所需的功率元件数目更少,运行的可靠性大大增高。IGCT集 IGBT (绝缘门极双极性晶体管)的高速开关特性和GTO (门极关断品闸管)的高阻断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元。在ACS6000的有缘整流单元的相模块里，每相模块由IGCT 和二极管、钳位电容组成，由独立的门极供电单元GUSP为其提供能源。

IGCT is to integrate the GTO chip with the anti-parallel diode and the pole drive circuit, and then connect it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, to play the performance of the thyristor in the on-stage, and to show the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss, etc., and has the advantages of low cost and high yield. It has been used in power system power grid device (100MVA) and medium power I drive device (5MW)IGCT in the field of medium voltage inverter successfully applied for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuit, so the number of power components required is less, and the reliability of operation is greatly increased. The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.

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