ABB 5SHX1445H0001 IGCT模块 利用集成栅极结构进行栅极硬驱动

ABB  5SHX1445H0001  IGCT模块

IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一
种基于GTO结构、利用集成栅极结构进行栅极硬驱动、5SHX1445H0001采用缓冲层结构及阳极透明发射极技术的新型大功率半导体
开关器件，具有晶闸管的通态特性及晶体管的开关特性。由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50％，
另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，5SHX1445H0001从而以其独特的方式实现了晶闸管的低通
态压降、高阻断电压和晶体管稳定的开关特性有机结合.

IGCT (Intergrated Gate Com Muttered Thyristors) is a new type of power semiconductor device which was introduced in
1996 and used in giant power electronic devices. IGCT is a new type of high-power semiconductor switching device
based on GTO structure, which uses integrated gate structure to drive the gate hard, and 5SHX1445H0001 adopts
buffer layer structure and anode transparent emitter technology. It has the on-state characteristics of thyristor and
the switching characteristics of transistor. With the adoption of buffer structure and shallow emitter technology, the
dynamic loss is reduced by about 50%. In addition, this kind of device integrates a freewheeling diode, 5SHX1445H0001,
with good dynamic characteristics on one chip, thus realizing the organic combination of low on-state voltage drop, high
blocking voltage and stable switching characteristics of thyristor in its unique way.

主营DCS控制系统备件，PLC系统备件及机器人系统备件， 优势品牌：Allen Bradley、BentlyNevada、ABB、Emerson Ovation、
Honeywell DCS、Rockwell ICS Triplex、FOXBORO、Schneider PLC、GE Fanuc、Motorola、HIMA、TRICONEX、Prosoft等
各种进口工业零部件